Chemical vapor deposition of TiS2 was examined. TiS2 was deposited on a quartz substrate above 300 °C from a gas mixture of TiCl4, H2S, and Ar. Maximum deposition rate was attained at 700–800 °C for a 0.7 gas flow ratio H2S/(TiCl4+H2S) irrespective of temperature. Crystal morphology and composition were strongly affected by temperature and gas compositions. Well-formed TiS2 crystals were grown either at 600 °C or from a gas mixture of low flow ratio 0.2 of H2S/(TiCl4+H2S). Single phase of TiS2 was deposited in the temperature range 400–850 °C.
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Motojima et al. (1978) studied this question.
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