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We have fabricated a series of p-i-n Ge/Si heterojunction photodetectors with different thicknesses of the nominally intrinsic Ge layer. Epitaxial Ge was deposited on Si(1 0 0) using low-energy plasma-enhanced CVD (LEPECVD) followed by cyclic annealing. The residual tensile strain
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Isella et al. (2006) studied this question.
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