Ge on Si p-i-n photodiodes operating at 10Gbit∕s

We report on fast p-i-n photodetectors operating in the near infrared and realized in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600°C without affecting the crystal quality and allowing the integration with standard silicon processes. We demonstrate responsivities of 0.4 and 0.2A∕W at 1.3 and 1.55μm, respectively, as well as operation at 10Gbit∕s.