AlGaAs/GaAs HBTs with compositionally-graded carbondoped base layers were grown by conventional low-pressure MOCVD for the first time. A high current gain of 100 obtained for a very high base doping of 8 × 1019cm−3 indicates the high crystal quality of the AlGaAs graded base layer.
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Hiroshi Itô (1990) studied this question.
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