Carbon-doped base AlGaAs/GaAs HBTs grown by MOCVD using TMAs

AlGaAs/GaAs HBTs with carbon-doped bases are grown by conventional low-pressure MOCVD using trimethylarsine as the carbon source for the first time. The obtained current gain values of 100 for 5×1018cm−3 base doping and 40 for 1×1019cm−3 base doping reveal the feasibility of trimethylarsine as a p-type dopant source for MOCVD growth