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May 18, 1987Applied Physics Letters

Abrupt p-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxy

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Authors

NKNaoki KobayashiNippon Shokubai (Japan)TMToshiki MakimōtoWaseda UniversityYHYoshiji HoríkoshiWaseda University

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Kobayashi et al. (1987) studied this question.

synapsesocial.com/papers/6a950ae2397e3dbeede61baehttps://doi.org/10.1063/1.97846
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