InGaAs/GaAs quantum well structures are grown by a modified MOCVD method, called flow-rate modulation epitaxy (FME), in which organometals and arsine are alternately fed into a reaction chamber. These structures exhibit low-temperature photoluminescence with very narrow linewidths. The linewidth of single quantum well is 0.4 meV, the best reported value for any quantum wells. Exciton structures of multiple quantum wells are clearly observed. This extremely sharp photoluminescence shows that FME can grow atomically flat InGaAs/GaAs interfaces by enhancing the surface migration of isolated In and Ga.
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Sato et al. (1988) studied this question.
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