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Ultraviolet ArF excimer laser irradiation is found to enhance the doping efficiency from disilane in gas source molecular beam epitaxial growth of n-GaAs. The enhancement is observed in two configurations in which the laser beam is directed either normal or parallel to the substrate surface. The increase in doping efficiency is caused by the photolytic decomposition of disilane.
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Kimura et al. (1987) studied this question.
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