Process Induced Crystal Defects in Dislocation‐Free n‐Type Silicon Material

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This paper describes investigations on process induced crystal defects in n‐type silicon material of both Czochralski‐ and zone‐floating‐techniques (dislocation‐free). The heating and cooling processes, the oxide thickness, mechanical stresses near the diffusion windows, the mask pattern geometry concerning diffusion and the surface concentration of the doping material have been specially investigated. The influence of those technological parameters on the generation of crystal defects in the production of electronic devices is investigated and discussed.