GaAs/GaInP multiquantum well long-wavelength infrared detector using bound-to-continuum state absorption

We demonstrate an 8 μm superlattice infrared detector which utilizes bound-to-continuum state intersubband absorption in lattice-matched GaAs/Ga0.5In0.5P multiquantum well structures grown by atmospheric pressure metalorganic vapor phase epitaxy. The band offsets of the GaAs/Ga0.5In0.5P heterosystem are obtained by comparing the theoretical absorption spectrum and the measured responsivity spectrum. The values determined for ΔEc and ΔEv are 221 and 262 meV, respectively.