Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 1, 1980IEEE Electron Device Letters

Microwave switching with parallel-resonated GaAs FETS

View Full Paper
Ask AI
Bookmark
Share

Authors

WMW. V. McLevigeSensors (United States)VSV. A. SokolovArctic and Antarctic Research Institute

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

McLevige et al. (1980) studied this question.

synapsesocial.com/papers/6a9516272ea3449151e6171fhttps://doi.org/10.1109/edl.1980.25271
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1GaAs SAMP Device for Ku-Band Switching1979 · 16 citations
  2. 2Performance of Dual-Gate GaAs MESFET's as Gain-Controlled Low-Noise Amplifiers and High-Speed Modulators1975 · 84 citations
  3. 3Dual-gate GaAs FET switches1981 · 22 citations
  4. 4Coplanar Waveguide: A Surface Strip Transmission Line Suitable for Nonreciprocal Gyromagnetic Device Applications1969 · 891 citations
  5. 5Si and GaAs 0.5 μ m-gate Schottky-barrier field-effect transistors1973 · 52 citations