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May 17, 1973Electronics Letters

Si and GaAs 0.5 μ m-gate Schottky-barrier field-effect transistors

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Authors

WBW. BaechtoldETH ZurichKDK. DaetwylerIBM (United States)TFTh. FörsterIBM Research - Zurich

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Baechtold et al. (1973) studied this question.

synapsesocial.com/papers/6a6f2cf1e5469ee92be0382bhttps://doi.org/10.1049/el:19730168
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