Low-threshold-current and high-power operation of 1.5 μm GaInAsP/InP bundle-integrated-guide (BIG) DBR lasers were obtained. A single-mode operation temperature range of more than 70 deg was demonstrated around room temperature by shortening the active region to 100 μm. The modulation characteristic was measured up to 2 GHz with a modulation depth of 100%. A maximum value of dynamic wavelength shift was 2 Å at 1.2 times threshold current.
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Tohmori et al. (1985) studied this question.
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