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Bright n-ZnO nanowire/p-GaN film hybrid heterojunction light-emitting-diode (LED) devices are fabricated by directly growing n-type ZnO-nanowire arrays on p-GaN wafers. UV–blue electroluminescence emission was observed from the heterojunction diodes, and the heterojunction LED device exhibited a high sensitivity in responding to UV irradiation.
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Zhang et al. (2009) studied this question.
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