Behavior of n-ZnO nanorods/p-Si heterojunction devices at higher temperatures

This work explores the temperature dependent heterojunction behavior of n-type zinc oxide (ZnO) nanorods/ZnO∕p-Si diodes. The as-grown ZnO nanorod structures on ZnO coated p-Si substrates are single crystalline and grown along the [001] direction. The p-n diode showed an excellent stability over the temperature range of 20–150°C due to highly doped p-type Si substrate. The turn-on and breakdown voltage of the device slightly decreased with an increase of temperature whereas the saturation current of the device increased from 0.42to0.67μA. The device behavior at different temperatures in forward as well as reverse biased conditions are studied and reported.