Low-frequency noise in GaN nanowire transistors

Noise in nanostructures is one of the key problems impeding their applications in electronic devices. We show that the level of 1∕f and recombination-generation noise in GaN nanowire field effect transistors can be suppressed by ultraviolet radiation by up to an order of magnitude. This strong suppression of the noise is explained by the illumination changing the occupancy of traps responsible for noise.