Lattice sites of implanted Fe in Si

The angular distribution of β^- particles emitted by the radioactive isotope ⁵⁹Fe was monitored following implantation into Si single crystals at fluences from $1.4×{}{10}¹²{{0.3em}{0ex}}{cm}^{{-}2}{{0.3em}{0ex}}to{{0.3em}{0ex}}1×{}{10}¹⁴{{0.3em}{0ex}}{cm}^{{-}2}$. We identified Fe on three distinct sites: ideal substitutional, displaced substitutional and displaced tetrahedral interstitial. Whereas displaced substitutional Fe was dominating for annealing temperatures below 5000.2em0ex^∘C, annealing between 500--7000.2em0ex^∘C caused the majority of Fe to occupy displaced tetrahedral interstitial sites. Ideal substitutional positions were increasingly populated following annealing at 8000.2em0ex^∘C and above. A comparison of the emission channeling results to M\"ossbauer and electron paramagnetic resonance experiments is given.