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June 15, 1970Applied Physics Letters

MEASUREMENT OF ION IMPLANTATION LATTICE DAMAGE IN (111) GaAs USING THE SCANNING ELECTRON MICROSCOPE

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Authors

EWE. D. WolfSemiconductor Research CorporationRHRobert G. HunspergerCalifornia Institute of Technology

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Wolf et al. (1970) studied this question.

synapsesocial.com/papers/6a9531d02fdd6c151ff229d6https://doi.org/10.1063/1.1653092
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