A high sensitivity hydrostatic pressure and temperature based on a defective 1D photonic crystal

We study the transmission spectrum and the band structure of a one-dimensional photonic crystal, made of alternating layers of SiO2 and TiO2 with a GaAs defect layer. The relative permittivity of the GaAs depends on the hydrostatic pressure and the temperature, while its thickness depends only on the pressure. The objective of this work is to apply an external pressure and temperature on the GaAs and study the behavior of the defect mode. The insertion of the GaAs layer inside the perfect structure creates defect mode in the gaps with higher quality factor Q (Q=65858) and important transmission rate T (T=88%). The results show that our structure is sensitive to pressure and temperature variations of approximately P = 50 bar and Θ = 5°K, with a frequency shift of 0.05THz and 0.108THz, respectively. So, our proposed structure is a good candidate for the hydrostatic pressure and temperature sensor design.