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The electrical resistivity and the Hall coefficient of the layered compound ZrSe 2 and HfSe 2 grown by iodine vapour transport method have been measured. High anisotropy in electrical resistivities has been found for these compounds. The Hallmobility exhibits a temperature dependence of the form µ∝ T -1.6 in ZrSe 2 as well as in HfSe 2 . It is well explained in terms of homo-polar-mode optical scattering.
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鄭 et al. (1989) studied this question.
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