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Recovery, by low-temperature (70/spl deg/C) annealing, of switching fields and training effect of a trained FeO/sub x/(/spl alpha/-Fe/sub 2/O/sub 3/ with a fraction of Fe/sub 0.98/O)(70 nm)-CoFe(5 nm) bilayer sample has been investigated. The recovery curve of the switching field in the direction opposite to the pinned direction was well fitted to a curve of a single activation energy response curve for about 1 eV. The training effect was also found to recover by annealing to some extent, but not as much as the switching field. Those results have been explained by a different mechanism from the thermal spin-flip mechanism contributing to the training effect itself.
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Zhang et al. (2002) studied this question.
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