Molecular beam epitaxial growth of InAs on a TlBaCaCuO superconducting film

Results of growth of InAs on a superconducting TlCaBaCuO (2-1-2-2) thin film are reported. The InAs was grown by molecular beam migration-enhanced epitaxy at a substrate temperature of 250 °C. The Tc(zero) of the Tl film before and after InAs deposition was 106 and 100 K, respectively. X-ray diffraction and reflection electron microscopy studies showed the InAs to be polycrystalline, having grains in the 300 Å size range. This is the first report of deposition of a III-V semiconductor on superconductor, without significant degradation of Tc.