Use of a scanning electron microscope to pattern large areas of a hydrogen resist for electrical contacts

We use scanning tunneling microscopy to investigate the atomic-scale process of hydrogen desorption from H:Si(001) with a 25keV scanning electron microscope (SEM) electron beam and characterize the rate of desorption, contaminant deposition, and desorption straggle. We then demonstrate the effectiveness of a SEM to pattern a hydrogen resist for device fabrication by showing that it is compatible with phosphine (PH3) dosing to form large (4×4μm2) buried planar conducting regions in silicon.