Direct proof of two-electron occupation of Ge-DXcenters in GaAs codoped with Ge and Te

In this paper we present the first direct and unambiguous evidence that the total number of electrons which can be trapped on Ge-DX centers is exactly twice as large as the number of electrons which can be bound on Ge-A₁ donor states. It should be emphasized that our reasoning does not require any technological information, about either doping or the compensation of a sample.