Study of temperature dependence for the electron injection-induced effects in GaN

Electron-beam injection-induced increase of minority carrier diffusion length in p-type GaN was studied as a function of sample temperature ranging from 25 °C to 130 °C. It was found that the rate for diffusion length increase exponentially decays with increasing temperature. This decay was attributed to a temperature-activated release of electron-beam injected electrons trapped on Mg levels. The activation energy of these levels was found to be ∼178 meV. This is in good agreement with the previously reported position for Mg levels in the GaN band gap.