Valence-band offset in strained GaAs-InxGa1−xAs superlattices

The valence (or conduction)-band offset for GaAs-InGaAs superlattices is determined by comparing the calculated energies with conduction intersubband energies obtained from electronic Raman scattering (ERS). A valence-band offset of 40% is estimated for samples with an In content of about 20%, whereas the offset is found to be 60% for samples with an In content of about 5%.