Metalorganic vapor phase epitaxy of GaN and lattice-matched InGaN on ScAlMgO4(0001) substrates

ScAlMgO 4 (SCAM) (0001) can be used for metalorganic vapor phase epitaxy (MOVPE) of GaN and lattice-matched In 0.17 Ga 0.83 N. GaN grown on SCAM(0001) via a low-temperature GaN buffer layer shows excellent structural quality, indicating that the GaN-SCAM interface is stable during MOVPE. For lattice-matched InGaN on SCAM(0001), a lattice-matched InGaN buffer layer grown at a lower temperature effectively improves the surface and luminescence uniformity. The grown InGaN is nearly unstrained and exhibits photoluminescence peaking at 505 nm at room temperature. These achievements indicate that In 0.17 Ga 0.83 N/SCAM lattice-matched templates may pave the way toward longer-wavelength light-emitting and -detecting devices using InGaN with higher In contents.