Characterization of GaAs P-N Structures Grown on GaAs(111)A Substrates Using Controlled All-Silicon Doping

GaAs p-n structures have been grown on a GaAs(111)A substrate by controlling the molecular beam epitaxy (MBE) growth conditions using only Si dopant. Cathodoluminescence (CL) spectra and I-V characteristics for the samples confirm the p-n structure. However, the quality of p-n structure is strongly affected by pausing after changing the growth conditions; as the pausing time is decreased, the breakdown voltage increases and the peak intensity of the emission spectrum increases drastically. Furthermore, for a pausing time of 1 min, emission in the p-layer appears at 14 K with increasing forward current; this indicates a decrease in the deep levels. As a result, strong emission of 875 nm is observed even at room temperature.