Kinetic modeling demonstrates that self-catalyzed Ga(As,P) nanowire composition depends strictly on Group-V flux ratios rather than growth rates, suggesting simplified semiconductor synthesis control.
A precise model for calculating the dependence of the composition of self-catalyzed Ga(As,P) nanowires on the growth parameters without any fitting parameters is proposed. It is shown that the Ga(As, P)-nanowire composition does not depend on the growth rate at a fixed ratio of the total fluxes of Group-V- and Group-III atoms. The results of modeling are in good agreement with the experimentally observed dependence of the Ga(As,P) nanowire composition on the ratio of the fluxes of As and P atoms.
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Sibirev et al. (2022) studied this question.
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