We present results achieved in the generation of terahertz wave by a semiconductor laser. It is a Fabry–Pérot based device with shallow grooves implemented on its p-side to engineer the longitudinal mode spectrum. The laser is dc-biased and temperature controlled at 298K. The main two modes are separated by 3nm at 1550nm with a side-mode-suppression ratio of 25dB. Using a frequency resolved optical gating, evidence of mode beating at 373GHz is observed. With a bolometer interfaced to a Fourier transform interferometer, the second harmonic signal is measured at 690GHz.
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Latkowski et al. (2008) studied this question.
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