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A highly efficient monolithically integrated Mach-Zehnder interferometer (MZI) optical switch based on a 1.5-μm InGaAs-AlGaInAs multiple-quantum-well structure is reported. The device was fabricated by integrating phase shifter sections with bandgap-shifted low-loss waveguides obtained by a single step sputtered SiO2-annealing quantum-well intermixing technique. Evaluation of the refractive index change induced by current injection (plasma, band-filling, band-shrinkage effects) and applied electric field (quantum confined Stark effect) based on the MZI was investigated. A device with an active length of 400 μm in one of the MZI arms had an extinction ratio /spl ges/20 dB with a half-wavelength current (I/sub /spl pi//) and half-wavelength voltage V/sub /spl pi// as low as 3.2 mA and 3.5 V (1.9 V in push-pull configuration), respectively.
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Sorel et al. (2005) studied this question.
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