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The first monolithically integrated DFB laser/Mach-Zehnder interferometric modulator fabricated by the selective area low pressure MOVPE growth technique is reported. A near 3-dB power divider at the Y-branches of the interferometer has been reproducibly achieved by a photolithographically defined dielectric mask used in the selective area growth technology and confirmed by an infrared near field imaging technique. A modulation depth of over 12 dB was achieved both in the forward and reverse bias to the arms of the phase modulator.>
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Tanbun-Ek et al. (1995) studied this question.
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