The noise behaviour of p+-GaAs transmission line models (TLMs) associated with the technology of heterojunction bipolar transistors is presented. Devices of different lengths all exhibit excess noise composed of 1/f and generation-recombination (GR) noise. Noise spectra are studied as a function of different bias and different sample lengths. Contact noise is shown to be negligible. Values of the Hooge parameter α are extracted.
No takes yet. Share an insight, caveat, or question.
Jarrix et al. (1993) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: