The 1/f noise of an n-type silicon MOSFET has been studied under conditions ranging from accumulation to depletion at 300 K. The experimental results are interpreted in terms of a bulk phenomenon and are characterized by Hooge's empirical 1/f noise parameter alpha with values between 10/sup -7/ and 10/sup -5/. The alpha value for surface conduction at strong accumulation can be at least one order of magnitude larger than the value for bulk conduction.>
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L.K.J. Vandamme (1989) studied this question.
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