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The resolution of depth profiling by Auger electron spectrscopy (AES) changes depending on ion sputtering conditions due to implanted ion effects such as knock-on and cascade mixing. To evaluate the influence of these effects on depth profiling, profile broadening due to ion sputtering was measured using different levels of energy and species of ions. In addition, the altered layer's thickness was estimated.
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Matsunaga et al. (1988) studied this question.
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