Far-infrared reflectivity measurements form ∼50 to ∼250 cm−1 on a Pb0.82Sn0.18Te epitaxial film (P∼1016 cm−3) on a high-carrier-density substrate (P∼1018 cm−3) of similar composition showed interference oscillations. These detailed reflectivity data were fitted using the standard two-oscillator model with a spatially variable plasma frequency. The fit determines the phonon frequencies, electron and phonon linewidths, high-frequency dielectric constant, and, using existing effective-mass data, the spatial profile of the free-carrier density.
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Tennant et al. (1975) studied this question.
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