Photoresist channel-constrained deposition of electroless metallization on ligating self-assembled films

Patterned, selective electroless deposition has been achieved using exposed and developed photoresists, produced with UV and e-beam exposure sources, to create channels for constrained metal growth on ligating self-assembled film surfaces. This process is attractive for the production of high-resolution, etching-resistant features for semiconductor integrated circuit (IC) fabrication, as well as for the fabrication of patterned metal lines for IC-level and (PWB)-level interconnects. Etched metal features with linewidths of 150 nm have been demonstrated.