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April 10, 2014Journal of Physics D Applied PhysicsOpen Access

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

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Authors

BRB. ReutersOSRAM (Germany)HHH. HahnAixtron (Germany)APAlexander PoothIQE (United Kingdom)

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Reuters et al. (2014) studied this question.

synapsesocial.com/papers/6a957d8218385f2ccae3d480https://doi.org/10.1088/0022-3727/47/17/175103
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