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Two modes of electron-beam radiation-induced precipitation have been observed in high-purity Lopex (low-oxygen dislocation-free silicon). (i) At room temperature a whiskerlike precipitate structure developed along the dislocation lines. (ii) During hot stage observations long needle-shaped precipitates oriented in 〈110〉 directions were formed.
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Nes et al. (1971) studied this question.
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