InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product

As (grown lattice-matched to InP substrates) to efficiently absorb and detect the optical signals with 1310 or 1550 nm wavelength, the optimal wavelengths of operation for these optical links. Thus developing InP-compatible APDs with high gain-bandwidth product (GBP) is important to the overall effort of increasing optical links' data transfer rate. Here we demonstrate a novel InGaAs/AlGaAsSb APD, grown on an InP substrate, with a GBP of 424 GHz, the highest value reported for InP-compatible APDs, which is clearly applicable to future optical communication systems at or above 10 Gb/s. The data reported in this article are available from the figshare digital repository (https://dx.doi.org/10.15131/shef. DATA: 3827460.v1).