This article describes the positive effect of replacing hydrogen with deuterium on the formation of an atomically flat surface in microwave plasma-assisted chemical vapor deposition (MPCVD) of homoepitaxial (111) diamond. Using atomic force microscopy (AFM) measurements, suppression of the density of surface islands and enlargement of the step-free surface area were identified. Isotope effects promoting preferential etching, which enhances the growth at steps (or kinks) and formation of the atomically flat surface, are discussed with respect to lateral growth.
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Mizuochi et al. (2012) studied this question.
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