Analysis and experiment for drain bias dependence of IMD sweet spots in GaN HEMT power amplifier

In this article, we propose the drain bias dependency on the intermodulation distortion (IMD) sweet spots of a gallium nitride (GaN) high‐electron mobility transistors power amplifier (PA). Using the mathematical approach by the IDS–VGS characteristic curves and two‐tone distortion products, the positions of the IMD sweet spots according to drain bias as well as gate bias and input power are predicted and well‐matched with the measured results.