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A simple mechanism explaining the enhanced luminescence of p-i-n structures and reach-though avalanche photodiodes approaching reverse-bias breakdown is proposed. The model presented predicts enhanced photon emission based on calculations of the spatial dependence of the impact ionization events. Experimentally, an enhancement of a factor of 100 in the optical efficiency is observed in p-i-n silicon photodiodes when biased in the gain regime. A series of measurements made on commercially available photodiodes are presented. Theoretical predictions are compared with the experimental photonic output versus internal electric field and current.
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Swoger et al. (1993) studied this question.
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