January 1, 2013Electronics Letters

High‐power‐tolerant InAlAs avalanche photodiode for 25 Gbit/s applications

View Full Paper

Ask AI

Bookmark

Authors

MNMasahiro NadaNTT (Japan)YMY. MuramotoJuntendo University HYHideaki YokoyamaInstituto de Ciencia de Materiales de Sevilla

Abstract

A wide optical‐input dynamic range is demonstrated for an inverted p‐down InAlAs/InGaAs avalanche photodiode. The 3 dB down bandwidth maintains a value as high as 18 GHz for an input optical power level of up to + 2.5 dBm. Such high‐power tolerance meets the requirements of various future optical fibre communications systems such as 100 Gbit/s Ethernet which has a serial baud rate of 25 Gbit/s.

Discussion

Member takes

Cite This Study

Nada et al. (2013) studied this question.

synapsesocial.com/papers/6a95a10aa2fc4296d74bca0c https://doi.org/10.1049/el.2012.3922

View Full Paper

Ask AI

Bookmark

High‐power‐tolerant InAlAs avalanche photodiode for 25 Gbit/s applications

Abstract

Discussion

Member takes

Cite This Study

High‐power‐tolerant InAlAs avalanche photodiode for 25 Gbit/s applications

Abstract

Discussion

Member takes

Cite This Study

Also Consider

Also Consider