Deposition rates are presented for silicon from silane in a helium carrier gas using a tubular CVD reactor with a two‐dimensional flow geometry. Measured surface‐temperature profiles, inlet gas velocities, total pressures, and silane/helium concentrations are reported, providing exact boundary conditions that can be used in a two‐dimensional numerical CVD model. Comparisons are made between this data and two variations of a model by Coltrin, Kee, and Miller in which different empirical expressions for the silane and disilane reactive sticking coefficient are used.
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Breiland et al. (1990) studied this question.