A kind of pressure−composition (P−X) phase diagram was built for PbTe films grown by the hot−wall technique. This diagram proves to be a very valuable guide to prepare, reproducibly, films with a desired conduction type and carrier concentration. Although the diagram should not be interpreted as having general validity, we find that it has marked similarities with the equilibrium phase diagram obtained previously for PbTe.
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A. Lopez‐Otero (1975) studied this question.
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