The absorption spectra in the range from 0.3 to 2.1 eV of V2O5 single crystals doped with Ti, Mo, and Cu are presented. Besides of bands due to impurities, an enhanced absorption from oxygen vacancies is observed in Ti‐doped samples. Models of the various defect centres involved are discussed and it is shown that the absorption bands can be attributed to centres involving V4+ and an impurity. The model of Ballhausen and Gray for vanadyl complexes is used as a working model for the defects. Two weak bands are assigned to ligand field transitions of V4+. The more intense bands are assigned to charge transfer transitions into the orbitals of the neighbouring vanadium ions or the impurities.
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Clauws et al. (1975) studied this question.
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