Linearity‐optimized class‐E Doherty amplifier based on GaN HEMT

In this article, we report the linearity improvement of the GaN HEMT class‐E Doherty power amplifier (CEDA). For the linearity improvement, not only the gate biases but also the matching circuits of the carrier and peaking cells are optimally controlled at a pout of 38 dBm, which is a 7‐dB back‐off power. For a two‐tone signal with 1‐MHz tone spacing, the IMD3 of‐58 dBc is achieved with a power‐added efficiency (PAE) of 45.4%. For a one‐carrier WCDMA signal, the PAE of 46.7% is obtained with an ACLR of‐32.9 dBc.