A Broadband Integrated Class-J Power Amplifier in GaAs pHEMT Technology

This paper presents a design methodology for class-J monolithic microwave integrated circuit (MMIC) power amplifiers (PAs). Theoretical derivations of optimum load impedances, output power, efficiency, and maximum bandwidth are described in presence of nonlinear drain-source resistance of transistors (RDS) . A procedure is developed for ideal transistor sizing where transistors are concurrently stabilized and sized to achieve the maximum power-added efficiency (PAE). A 3.5-7 GHz, 0.5-W class-J PA is implemented in a 0.1-μm AlGaAs-InGaAs pHEMT technology to check the accuracy of the proposed approach. With chip dimensions of 1.57 ×1.29 mm2, the PA achieves 56% average PAE over the frequency band while maintaining an average 11-dB small-signal gain.