Answers are grounded in this paper and cite their sources.
It is experimentally demonstrated for the first time that an a-Si:H photodiode with reach-through structure can detect infrared light of 1.31 μm and 1.55 μm. A maximum gain-quantum efficiency product of 0.58 is obtained at a reverse bias of /spl minus/10 V under 100 μW illumination at 1.31 μm. This value of gain-quantum efficiency product is comparable to the quantum efficiency of a non-gain-enhanced a-Si:H pin photodiode at visible wavelengths.
No takes yet. Share an insight, caveat, or question.
Okamura et al. (1994) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: